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01/99 b-9 2N4117, 2N4117a, 2n4118, 2n4118a, 2n4119, 2n4119a n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 300 mw power derating (to 175c) 2 mw/c toe72 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 4 case 2N4117 2n4118 2n4119 at 25c free air temperature: 2N4117a 2n4118a 2n4119a process nj01 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss C 40 C 40 C 40 v i g = C 1a, v ds = ? v gate reverse current 2N4117, 2n4118, 2n4119 i gss C 10 C 10 C 10 pa v gs = C 20 v, v ds = ?v 2N4117a, 2n4118a, 2n4119a C 1C 1C 1pav gs = C 20 v, v ds = ?v gate source cutoff voltage v gs(off) C 0.6 C 1.8 C 1 C 3 C 2 C 6 v v ds = 10 v, i d = 1 na drain saturation current (pulsed) 2N4117, 2n4118, 2n4119 i gss 0.03 0.09 0.08 0.24 0.2 0.6 ma v ds = 10 v, v gs = ? v 2N4117a, 2n4118a, 2n4119a 0.015 0.09 0.08 0.24 0.2 0.6 ma v ds = 10 v, v gs = ? v dynamic electrical characteristics common source forward g fs 70 210 80 250 100 330 s v ds = 10 v, v gs = ?v f = 1 khz transconductance common source output conductance g os 3 5 10 s v ds = 10 v, v gs = ?v f = 1 khz common source input capacitance c iss 333pfv ds = 10 v, v gs = ?v f = 1 mhz common source reverse c rss 1.5 1.5 1.5 pf v ds = 10 v, v gs = ?v f = 1 mhz transfer capacitance audio amplifiers ultra-high input impedance amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-9
01/99 b-11 2n4338, 2n4339 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 50 v continuous forward gate current 50 ma continuous device power dissipation 300 mw power derating (to 175c) 2mw/c toe18 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate & case at 25c free air temperature : 2n433 8 2n433 9 process nj16 static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 50 C 50 v i g = C 1 a, v ds = ?v gate reverse current i gss C 100 C 100 pa v gs = C 30 v, v ds = ?v C 100 C 100 na v gs = C 30 v, v ds = ?v t a = 150c gate source cutoff voltage v gs(off) C 0.3 C 1 C 0.6 C 1.8 v v ds = 15 v, i d = 0.1 a drain saturation current (pulsed) i dss 0.2 0.6 0.5 1.5 ma v ds = 15 v, v gs = ? v drain cutoff current i d(off) 0.05 0.05 na v ds = 15 v, v gs = ( ) (C 5) (C 5) v dynamic electrical characteristics drain source on resistance r ds(on) 2500 1700 v gs = ? v, i d = ? a f = 1 khz common source g fs 600 1800 800 2400 s v ds = 15 v, v gs = ? v f = 1 khz forward transconductance common source output conductance g os 515sv ds = 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 77pfv ds = 15 v, v gs = ? v f = 1 mhz common source c rss 33pfv ds = 15 v, v gs = ? v f = 1 mhz reverse transfer capacitance noise figure nf 1 1 db v ds = 15 v, v gs = ? v f = 1 khz r g = 1 m , bw = 200 hz audio amplifiers small signal amplifiers voltage-controlled resistors current limiters & regulators 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-11
b-12 01/99 2n4340, 2n4341 n-channel silicon junction field-effect transistor small signal amplifiers current regulators voltage-controlled resistors absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 50 v continuous forward gate current 50 ma continuous device power dissipation 300 mw power derating (to 175c) 2mw/c toe18 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate & case surface mount smp4340, smp4341 at 25c free air temperature: 2n4340 2n4341 process nj16 static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 50 C 50 v i g = C 1 a, v ds = ?v gate reverse current i gss C 100 C 100 pa v gs = C 30 v, v ds = ?v C 100 C 100 na v gs = C 30 v, v ds = ?v t a = 150c gate source cutoff voltage v gs(off) C 1C 3C 2C 6 v v ds = 15 v, i d = 0.1 a drain saturation current (pulsed) i dss 1.2 3.6 3 9 ma v ds = 15 v, v gs = ? v drain cutoff current i d(off) 0.05 0.07 na v ds = 15 v, v gs = ( ) (C 5) (C 10) v dynamic electrical characteristics drain source on resistance r ds(on) 1500 800 v gs = ? v, i d = ? a f = 1 khz common source g fs 1300 3000 2000 4000 s v ds = 15 v, v gs = ? v f = 1 khz forward transconductance common source output conductance g os 30 60 s v ds = 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 77pfv ds = 15 v, v gs = ? v f = 1 mhz common source c rss 33pfv ds = 15 v, v gs = ? v f = 1 mhz reverse transfer capacitance noise figure nf 1 1 db v ds = 15 v, v gs = ? v f = 1 khz r g = 1 m , bw = 200 hz 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-12
01/99 b-17 2n4867, 2n4867a, 2n4868, 2n4868a, 2n4869, 2n4869a n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v gate current 50 ma continuous device power dissipation 300mw power derating 1.7 mw/c storage temperature range C 65c to + 200c toe72 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 4 case surface mount smp4867, smp4867a, smp4868, smp4868a, smp4869, smp4869a 2n4867 2n4868 2n4869 at 25c free air temperature: 2n4867a 2n4868a 2n4869a process nj16 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss C 40 C 40 C 40 v i g = C 1a, v ds = ? v gate reverse current i gss C 0.25 C 0.25 C 0.25 na v gs = C 30 v, v ds = ? v C 0.25 C 0.25 C 0.25 a v gs = C 30 v, v ds = ? v t a = 150c gate source cutoff voltage v gs(off) C 0.7 C 2 C 1 C 3 C 1.8 C 5 v v ds = 20 v, i d = 1 a drain saturation current (pulsed) i dss 0.4 1.2 1 3 2.5 7.5 ma v ds = 20 v, v gs = ? v dynamic electrical characteristics common source forward g fs 700 2000 1000 3000 1300 4000 s v ds = 20 v, v gs = ?v f = 1 khz transconductance common source output conductance g os 1.5 4 10 s v ds = 20 v, v gs = ?v f = 1 khz common source input capacitance c iss 25 25 25 pf v ds = 20 v, v gs = ?v f = 1 mhz common source reverse c rss 555pfv ds = 20 v, v gs = ?v f = 1 mhz transfer capacitance equivalent short circuit e n 20 20 20 nv/ hz v ds = 10 v, v gs = ?v f = 10 hz input noise voltage 10 10 10 nv/ hz v ds = 10 v, v gs = ?v f = 1 khz v ds = 10 v, v gs = ?v f = 1 khz noise figure nf 1 1 1 db (2n4867, 68, 69) r g = 20 k (2n4867a, 68a, 69a) r g = 5 k audio amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/14/99 12:00 pm page b-17
01/99 b-25 2n6451, 2n6452 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c 2n6451 2n6452 reverse gate source voltage C 20 v C 25 v reverse gate drain voltage C 20 v C 25 v continuous forward gate current 10 ma 10 ma continuous device power dissipation 360 mw 360 mw power derating 2.88 mw/c 2.88 mw/c toe72 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 4 case at 25c free air temperature: 2n6451 2n6452 process nj132l static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 20 C 25 v i g = C 1 a, v ds = ?v C 0.1 na v gs = C 10 v, v ds = ?v gate reverse current i gss C 0.5 na v gs = C 15 v, v ds = ?v C 0.2 a v gs = C 10 v, v ds = ?v t a = 125c C 1 a v gs = C 15 v, v ds = ?v t a = 125c gate source cutoff voltage v gs(off) C 0.5 C 3.5 C 0.5 C 3.5 v v ds = 10 v, i d = 0.5 na drain saturation current (pulsed) i dss 520520mav ds = 10 v, v gs = ? v dynamic electrical characteristics common source | y fs | 15 30 15 30 ms v ds = 10 v, i d = 5 ma f = 1 khz forward transmittance ms v ds = 10 v, i d = 15 ma f = 1 khz common source | y os | 50 50 s v ds = 10 v, i d = 5 ma f = 1 khz output conductance s v ds = 10 v, i d = 15 ma f = 1 khz common source c iss 25 25 pf v ds = 10 v, i d = 5 ma f = 1 khz input capacitance pf v ds = 10 v, i d = 15 ma f = 1 khz common source reverse c rss 55pfv ds = 10 v, i d = 5 ma f = 1 khz transfer capacitance pf v ds = 10 v, i d = 15 ma f = 1 khz equivalent short circuit e n 510 nv/ hz v ds = 10 v, i d = 5 ma f = 10 khz input noise voltage 38 nv/ hz v ds = 10 v, i d = 5 ma f = 1 khz noise figure nf 1.5 2.5 db v ds = 10 v, i d = 5 ma f = 10 hz r g = 10 k audio amplifiers low-noise, high gain amplifiers low-noise preamplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-25
b-26 01/99 2n6453, 2n6454 n-channel silicon junction field-effect transistor audio amplifiers low-noise, high gain amplifiers low-noise preamplifiers absolute maximum ratings at t a = 25?c 2n6453 2n6454 reverse gate source voltage C 20 v C 25 v reverse gate drain voltage C 20 v C 25 v continuous forward gate current 10 ma 10 ma continuous device power dissipation 360 mw 360 mw power derating 2.88 mw/c 2.88 mw/c toe72 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 4 case at 25c free air temperature: 2n6453 2n6454 process nj132l static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 20 C 25 v i g = C 1 a, v ds = ?v C 0.1 na v gs = C 10 v, v ds = ?v gate reverse current i gss C 0.5 na v gs = C 15 v, v ds = ?v C 0.2 a v gs = C 10 v, v ds = ?v t a = 125c C 1 a v gs = C 15 v, v ds = ?v t a = 125c gate source cutoff voltage v gs(off) C 0.75 C 5 C 0.75 C 5 v v ds = 10 v, i d = 0.5 na drain saturation current (pulsed) i dss 15 50 15 50 ma v ds = 10 v, v gs = ? v dynamic electrical characteristics common source | y fs | ms v ds = 10 v, i d = 5 ma f = 1 khz forward transmittance 20 40 20 40 ms v ds = 10 v, i d = 15 ma f = 1 khz common source | y os | s v ds = 10 v, i d = 5 ma f = 1 khz output conductance 100 100 s v ds = 10 v, i d = 15 ma f = 1 khz common source c iss pf v ds = 10 v, i d = 5 ma f = 1 khz input capacitance 25 25 pf v ds = 10 v, i d = 15 ma f = 1 khz common source reverse c rss pf v ds = 10 v, i d = 5 ma f = 1 khz transfer capacitance 55pfv ds = 10 v, i d = 15 ma f = 1 khz equivalent short circuit e n 5 10 nv/ hz v ds = 10 v, i d = 5 ma f = 10 khz input noise voltage 3 8 nv/ hz v ds = 10 v, i d = 5 ma f = 1 khz noise figure nf 1.5 2.5 db v ds = 10 v, i d = 5 ma f = 10 hz r g = 10 k 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-26
b-54 01/99 j201, j202 n-channel silicon junction field-effect transistor audio amplifiers general purpose amplifiers absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj201, smpj202 at 25c free air temperature: j201 j202 process nj16 static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 40 C 40 v i g = C 1a, v ds = ? v gate reverse current i gss C 100 C 100 pa v gs = C 20 v, v ds = ? v gate operating current i g C 10 C 10 pa v dg = 20 v, i d = i dss(min) gate source cutoff voltage v gs(off) C 0.3 C 1.5 C 0.8 C 4 v v ds = 20 v, i d = 10 na drain saturation current (pulsed) i dss 0.2 1 0.9 4.5 ma v dss = 15 v, v gs = ? v dynamic electrical characteristics common source forward g fs 500 1000 s v ds = 20 v, v gs = ?v f = 1 khz transconductance common source output conductance g os 1 3.5 s v ds = 20 v, v gs = ? v f = 1 khz common source input capacitance c iss 44pfv ds = 20 v, v gs = ? v f = 1 mhz common source reverse c rss 11pfv ds = 20 v, v gs = ?v f = 1 mhz transfer capacitance equivalent short circuit input e n 55 nv/ hz v ds = 10 v, v gs = ?v f = 1 khz noise voltage 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-54
01/99 b-55 j203, j204 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj203, smpj204 at 25c free air temperature: j203 j204 process nj16 static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 40 C 25 v i g = C 1a, v ds = ? v gate reverse current i gss C 100 C 100 pa v gs = C 20 v, v ds = ? v gate operating current i g C 10 C 10 pa v dg = 20 v, i d = i dss(min) gate source cutoff voltage v gs(off) C 2 C 10 C 0.3 C 2 v v ds = 20 v, i d = 10 na drain saturation current (pulsed) i dss 4 20 0.2 1.2 3 ma v ds = 15 v, v gs = ? v dynamic electrical characteristics common source forward g fs 1500 500 1500 s v ds = 20 v, v gs = ? v f = 1 khz transconductance common source output conductance g os 10 2.5 s v ds = 20 v, v gs = ? v f = 1 khz common source input capacitance c iss 44pfv ds = 20 v, v gs = ? v f = 1 mhz common source reverse c rss 11pfv ds = 20 v, v gs = ?v f = 1 mhz transfer capacitance equivalent short circuit input e n 510 nv/ hz v ds = 10 v, v gs = ?v f = 1 khz noise voltage audio amplifiers general purpose amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-55
b-56 01/99 j210, j211 n-channel silicon junction field-effect transistor audio amplifiers general purpose amplifiers absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 25 v continuous forward gate current 10 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj210, smpj211 at 25c free air temperature: j210 j211 process nj26l static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 v i g = C 1a, v ds = ? v gate reverse current i gss C 100 C 100 pa v gs = C 15 v, v ds = ? v gate operating current i g C 10 C 10 pa v ds = 20 v, i d = 1 ma gate source cutoff voltage v gs(off) C 1 C 3 C 2.5 C 4.5 v v ds = 15 v, i d = 1 na drain saturation current (pulsed) i dss 215720mav ds = 15 v, v gs = ? v dynamic electrical characteristics common source forward g fs 4000 12000 6000 12000 s v ds = 15 v, v gs = ? v f = 1 khz transconductance common source output conductance g os 150 200 s v ds = 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 44pfv ds = 15 v, v gs = ? v f = 1 mhz common source reverse c rss 11pfv ds = 15 v, v gs = ?v f = 1 mhz transfer capacitance equivalent short circuit input e n 10 10 nv/ hz v ds = 15 v, v gs = ?v f = 1 khz noise voltage 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-56
01/99 b-57 j212 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 25 v continuous forward gate current 10 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj212 at 25c free air temperature: j212 process nj26l static electrical characteristics min typ max unit test conditions gate source breakdown voltage v (br)gss C 25 v i g = C 1 a, v ds = ? v gate reverse current i gss C 100 pa v gs = C 15 v, v ds = ?v gate operating current i g C 10 pa v ds = 20 v, i d = 1 ma gate source cutoff voltage v gs(off) C 4 C 6 v v ds = 15 v, i d = 1 na drain saturation current (pulsed) i dss 15 40 ma v ds = 15 v, v gs = ? v dynamic electrical characteristics common source forward transconductance g fs 7000 12000 s v ds = 15 v, v gs = ? v f = 1 khz common source output conductance g os 200 s v ds = 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 4pfv ds = 15 v, v gs = ? v f = 1 mhz common source reverse transfer c rss 1pfv ds = 15 v, v gs = ? v f = 1 mhz capacitance equivalent short circuit e n 10 nv/ hz v ds = 15 v, v gs = ? v f = 1 khz input noise voltage audio amplifier general purpose amplifier 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-57
b-58 01/99 j230, j231 n-channel silicon junction field-effect transistor audio amplifiers absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj230, smpj231 at 25c free air temperature: j230 j231 process nj16 static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 40 C 40 v i g = C 1a, v ds = ? v gate reverse current i gss C 250 C 250 pa v gs = C 30 v, v ds = ? v gate operating current i g C 2 C 2 pa v ds = 20 v, i d = ? v gate source cutoff voltage v gs(off) C 0.5 C 3 C 1.5 C 5 v v ds = 20 v, i d = 1 a drain saturation current (pulsed) i dss 0.7 3 2 6 ma v ds = 20 v, v gs = ? v dynamic electrical characteristics common source forward g fs 1000 3500 1500 4000 s v ds = 20 v, v gs = ?v f = 1 khz transconductance common source output conductance g os 1.5 3 s v ds = 20 v, v gs = ? v f = 1 khz common source input capacitance c iss 44pfv ds = 20 v, v gs = ? v f = 1 mhz common source reverse c rss 11pfv ds = 20 v, v gs = ?v f = 1 mhz transfer capacitance equivalent short circuit input e n 830 830 nv/ hz v ds = 10 v, v gs = ?v f = 10 hz noise voltage 22 nv/ hz v ds = 10 v, v gs = ?v f = 1 khz 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-58
01/99 b-59 j232 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj232 at 25c free air temperature: j232 process nj16 static electrical characteristics min typ max unit test conditions gate source breakdown voltage v (br)gss C 40 v i g = C 1 a, v ds = ? v gate reverse current i gss C 250 pa v gs = C 30 v, v ds = ?v gate operating current i g C 2 pa v ds = 20 v, i d = ? v gate source cutoff voltage v gs(off) C 3 C 6 v v ds = 20 v, i d = 1 a drain saturation current (pulsed) i dss 510mav ds = 20 v, v gs = ? v dynamic electrical characteristics common source forward transconductance g fs 2500 5000 s v ds = 20 v, v gs = ? v f = 1 khz common source output conductance g os 5sv ds = 20 v, v gs = ? v f = 1 khz common source input capacitance c iss 4pfv ds = 20 v, v gs = ? v f = 1 mhz common source reverse transfer c rss 1 pf v ds = 20 v, v gs = ? v f = 1 mhz capacitance equivalent short circuit e n 20 30 nv/ hz v ds = 10 v, v gs = ? v f = 10 hz input noise voltage 6 nv/ hz v ds = 10 v, v gs = ? v f = 1 khz audio amplifier 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-59
01/99 b-21 2n5460, 2n5461, 2n5462 p-channel silicon junction field-effect transistor absolute maximum ratings at 25?c reverse gate source & reverse gate drain voltage 40 v continuous forward gate current C 10 ma continuous device power dissipation 310 mw power derating 2.8 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smp5460, smp5461, smp5462 at 25c free air temperature: 2n5460 2n5461 2n5462 process pj32 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss 40 40 40 v i g = 10 a, v ds = ? v gate reverse current i gss 555nav gs = 20 v, v ds = ?v 111av gs = 20 v, v ds = ?v t a = 100c gate source cutoff voltage v gs(off) 0.75 6 1 7.5 1.8 9 v v ds = C 15 v, i d = C 1 a 0.8 4.5 v v ds = C 15 v, i d = C 100 a gate source voltage v gs 0.8 4.5 v v ds = C 15 v, i d = C 200 a 1.5 6 v v ds = C 15 v, i d = C 400 a drain saturation current (pulsed) i dss C 1C 5C 2C 9C 4C 16ma v ds = C 15 v, v gs = ?v dynamic electrical characteristics drain source on resistance r ds(on) 2 0.8 0.4 k v gs = ? v, i d = ? a f = 1 khz common source forward transadmittance |y fs | 1 4 1.5 5 2 6 ms v ds = C 15 v, v gs = ? v f = 1 khz common source output admittance | y os | 757575sv ds = C 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 777pfv ds = C 15 v, v gs = ? v f = 1 mhz common source reverse c rss 222pfv ds = C 15 v, v gs = ? v f = 1 mhz transfer capacitance equivalent short circuit e n 2.5 2.5 2.5 db v ds = C 15 v, v gs = ? v f = 100 hz, input noise voltage bw = 1 hz noise figure nf 115 115 115 nv/ hz v ds = C 15 v, v gs = ? v, f = 100 hz r g = 1 m audio amplifiers general purpose amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-21
g-4 01/99 to-71 package dimensions in inches (mm) to-72 package dimensions in inches (mm) 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com 0.100 (2.54) - dia. typ. 0.048 (1.22) 0.028 (0.71) 0.046 (1.17) 0.036 (0.91) bottom view 6 leads - dia. 0.019 (0.483) 0.016 (0.406) 0.230 (5.84) 0.209 (5.31) dia. 0.195 (4.96) 0.175 (4.44) dia. 0.750 (19.05) max. 0.500 (12.70) min 0.210 (5.34) 0.170 (4.32) 0.030 (0.76) max. 45 5 6 1 2 37 0.100 (2.54) - dia. typ. 0.048 (1.22) 0.028 (0.71) 0.046 (1.17) 0.036 (0.91) bottom view 4 leads - dia. 0.021 (0.53) 0.016 (0.41) 0.230 (5.84) 0.209 (5.31) dia. 0.195 (4.95) 0.178 (4.52) dia. 0.750 (19.05) max. 0.500 (12.70) min 0.210 (5.33) 0.170 (4.32) 0.030 (0.76) max. 45 3 1 24 databook.fxp 1/13/99 2:09 pm page g-4
g-2 01/99 to-18 package dimensions in inches (mm) to-39 package dimensions in inches (mm) 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com 0.100 (2.54) - dia. typ. 0.048 (1.22) 0.028 (0.71) 0.046 (1.17) 0.036 (0.91) bottom view 3 leads - dia. 0.021 (0.53) 0.016 (0.41) 0.230 (5.84) 0.209 (5.31) dia. 0.195 (4.95) 0.178 (4.52) dia. 0.750 (19.05) max. 0.500 (12.70) min 0.210 (5.33) 0.170 (4.32) 0.030 (0.76) max. 45 3 1 2 0.210 (5.34) dia. 0.190 (4.82) dia. 0.050 (1.14) 0.029 (0.74) 0.034 (0.86) 0.028 (0.71) 0.260 (6.60) 0.240 (6.10) 0.370 (9.40) 0.350 (8.89) dia. 0.335 (8.51) 0.315 (8.00) dia. 0.125 (3.18) max. 0.009 (0.23) min. alternate (preferred) version cap height = max 0.185 (4.70), min 0.165 (4.19) bottom view 3 leads - dia. 0.021 (0.53) 0.016 (0.41) 0.750 (19.05) max. 0.500 (12.70) min 45 3 1 2 databook.fxp 1/13/99 2:09 pm page g-2
g-6 01/99 to-226aa package (to-92) dimensions in inches (mm) to-226ab package (to-92/18) dimensions in inches (mm) 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com 0.210 (5.33) 0.170 (4.32) seating plane 0.750 (19.05) max. 0.500 (12.70) min. 0.105 (2.66) 0.095 (2.42) 0.022 (0.55) 0.014 (0.36) 3 leads 0.022 (0.55) 0.014 (0.36) 0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) bottom view 3 2 1 0.205 (5.20) 0.175 (4.45) 0.135 (3.43) min. 0.210 (5.33) 0.170 (4.32) seating plane 0.750 (19.05) max. 0.500 (12.70) min. 0.105 (2.66) 0.095 (2.42) 0.022 (0.55) 0.014 (0.36) 3 leads 0.022 (0.55) 0.014 (0.36) 0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) bottom view 3 0.052 (1.33) 0.047 (1.21) 2 1 0.205 (5.20) 0.175 (4.45) 0.135 (3.43) min. databook.fxp 1/13/99 2:09 pm page g-6
01/99 g-7 to-236ab package (sot-23) dimensions in inches (mm) soic-8 package dimensions in inches (mm) 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com 0.098 (2.64) 0.083 (2.10) 0.055 (1.40) 0.047 (1.20) 0.021 (0.54) 0.015 (0.38) 0.0059 (0.15) 0.0035 (0.089) 0.041 (1.12) 0.035 (0.89) 0.079 (2.00) 0.071 (1.80) 0.022 (0.55) 0.017 (0.44) 0.120 (3.05) 0.105 (2.67) 0.004 (0.10) 0.001 (0.02) 0.010 (0.25) 0.005 (0.13) 0.040 (1.02) 0.031 (0.79) 8 1 2 3 0.009 (0.23) 0.007 (0.18) 45 0.022 (0.56) 0.018 (0.046 0.158 (4.01) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 0.050 (1.27) 0.015 (0.37) min. 0.018 (0.46 0.014 (0.36) 0.197 (5.00) 0.188 (4.78) 0.059 (1.50) 0.049 (1.24) 0.069 (1.75) 0.053 (1.35) 5 6 7 8 4 3 2 1 databook.fxp 1/13/99 2:09 pm page g-7

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